EN/CN

Product

SI10US

Characteristic

  • Tg≥270℃(DMA),Td>400℃(5% loss, TGA)
  • Higher Flexural Modulus
  • Lower X, Y / Z-axis CTE
  • Halogen-free compatible with lead-free


Application Area


  • eMMC, DRAM
  • AP, PA
  • Dual CM
  • Fingerprint, RFModule, etc.


  • Product Performance
  • Product Certificate
  • Data Download
Items Condition Unit SI10US
Tg DMA 280
Td 5% wt. loss
>400
CTE (X/Y-axis) Before Tg ppm/℃
10
CTE (Z-axis)
α1/α2 ppm/℃
25/135
Dielectric Constant 1) (1GHz) 2.5.5.9 - 4.4
Dissipation Factor 1) (1GHz)
2.5.5.9 - 0.007
Peel Strength1) 1/3 OZ, VLP Cu N/mm
0.80
Solder Dipping @288℃ min >30
Young's modulus 50℃ GPa 26
Young's modulus
200℃ GPa
23
Flexural Modulus1) 50℃
GPa
32
Flexural Modulus1)
200℃
GPa
27
Water Absorption1)
A % 0.14
Water Absorption1) 85℃/85%RH,168Hr %
0.35
Flammability
UL-94 Rating
V-0
Thermal Conductivity - W/(m.K) 0.61
Color - - Black

Remarks:

*Specimen thickness: 0.10mm. Test method is according to IPC-TM-650.

*1): specimen thickness: 0.80mm.

All the typical value listed above isfor your reference only, please turn to Shengyi Technology Co.,Ltd. fordetailed information, and all rights from this data sheet are reserved byShengyi Technology Co.,Ltd.